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KSC2688YSTSSTU

Transistors Bipolar (BJT) NPN Epitaxial Sil

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SeekIC No. : 00210627 Detail

KSC2688YSTSSTU: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSC2688YSTSSTU Data Sheet

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Part Number:
KSC2688YSTSSTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 300 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.2 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Frequency : 80 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-126
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum Operating Frequency : 80 MHz
Maximum DC Collector Current : 0.2 A
Collector- Emitter Voltage VCEO Max : 300 V
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-126


Parameters:

Technical/Catalog InformationKSC2688YSTSSTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)300V
Current - Collector (Ic) (Max)200mA
Power - Max1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 10V
Vce Saturation (Max) @ Ib, Ic1.5V @ 5mA, 50mA
Frequency - Transition80MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-126
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSC2688YSTSSTU
KSC2688YSTSSTU



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