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KSC2682YSTU: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSC2682YSTU Data Sheet

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Part Number:: KSC2682YSTU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/21

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KSC2001 evaluate
Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage 3...
KSC2001GBU evaluate
Transistors Bipolar (BJT) NPN Epitaxial Sil
KSC2001GTA evaluate
Transistors Bipolar (BJT) NPN Epitaxial Transistor

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	180 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	0.1 A
DC Collector/Base Gain hfe Min :	100	Configuration :	Single
Maximum Operating Frequency :	200 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-126
Packaging :	Tube

Description

Transistor Polarity : NPN
DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Frequency : 200 MHz
Packaging : Tube
Maximum DC Collector Current : 0.1 A
Package / Case : TO-126
Collector- Emitter Voltage VCEO Max : 180 V

Parameters:

Technical/Catalog Information	KSC2682YSTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	180V
Current - Collector (Ic) (Max)	100mA
Power - Max	8W
DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	500mV @ 5mA, 50mA
Frequency - Transition	200MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-126
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSC2682YSTU KSC2682YSTU

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