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KSC2330RTA

Transistors Bipolar (BJT) NPN Epitaxial Transistor

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SeekIC No. : 00211313 Detail

KSC2330RTA: Transistors Bipolar (BJT) NPN Epitaxial Transistor

KSC2330RTA Data Sheet

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Part Number:
KSC2330RTA
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 300 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 0.1 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Frequency : 50 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Ammo    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-92
Maximum DC Collector Current : 0.1 A
Emitter- Base Voltage VEBO : 7 V
Packaging : Ammo
Collector- Emitter Voltage VCEO Max : 300 V
DC Collector/Base Gain hfe Min : 40
Maximum Operating Frequency : 50 MHz


Parameters:

Technical/Catalog InformationKSC2330RTA
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)300V
Current - Collector (Ic) (Max)100mA
Power - Max1W
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 20mA, 10V
Vce Saturation (Max) @ Ib, Ic500mV @ 1mA, 10mA
Frequency - Transition50MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92L
PackagingTape & Box (TB)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSC2330RTA
KSC2330RTA



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