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KSC2330ABU: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSC2330ABU Data Sheet

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Part Number:: KSC2330ABU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/24

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KSC2001 evaluate
Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage 3...
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Transistors Bipolar (BJT) NPN Epitaxial Sil
KSC2001GTA evaluate
Transistors Bipolar (BJT) NPN Epitaxial Transistor

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Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	400 V
Emitter- Base Voltage VEBO :	7 V	Maximum DC Collector Current :	0.1 A
DC Collector/Base Gain hfe Min :	40	Configuration :	Single
Maximum Operating Frequency :	50 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-92
Packaging :	Bulk

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 400 V
Maximum DC Collector Current : 0.1 A
Emitter- Base Voltage VEBO : 7 V
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Maximum Operating Frequency : 50 MHz

Parameters:

Technical/Catalog Information	KSC2330ABU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	400V
Current - Collector (Ic) (Max)	100mA
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 20mA, 10V
Vce Saturation (Max) @ Ib, Ic	500mV @ 1mA, 10mA
Frequency - Transition	50MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92L
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSC2330ABU KSC2330ABU

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KSC2330ABU

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