Transistors Bipolar (BJT) NPN Epitaxial Transistor
KSC2316OTA: Transistors Bipolar (BJT) NPN Epitaxial Transistor
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 120 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 0.8 A |
DC Collector/Base Gain hfe Min : | 80 | Configuration : | Single |
Maximum Operating Frequency : | 120 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-92 |
Packaging : | Ammo |
Technical/Catalog Information | KSC2316OTA |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 120V |
Current - Collector (Ic) (Max) | 800mA |
Power - Max | 900mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 100mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
Frequency - Transition | 120MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-92L |
Packaging | Tape & Box (TB) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KSC2316OTA KSC2316OTA |