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KSC2316OBU: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSC2316OBU Data Sheet

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Part Number:: KSC2316OBU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/24

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KSC2001 evaluate
Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage 3...
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Transistors Bipolar (BJT) NPN Epitaxial Sil
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Transistors Bipolar (BJT) NPN Epitaxial Transistor

Product Details

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Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	120 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	0.8 A
DC Collector/Base Gain hfe Min :	80	Configuration :	Single
Maximum Operating Frequency :	120 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-92
Packaging :	Bulk

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum DC Collector Current : 0.8 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 80
Collector- Emitter Voltage VCEO Max : 120 V
Maximum Operating Frequency : 120 MHz

Parameters:

Technical/Catalog Information	KSC2316OBU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	120V
Current - Collector (Ic) (Max)	800mA
Power - Max	900mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Frequency - Transition	120MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92L
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSC2316OBU KSC2316OBU

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KSC2316OBU

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