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KSC2310RBU

Transistors Bipolar (BJT) NPN Epitaxial Sil

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SeekIC No. : 00211278 Detail

KSC2310RBU: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSC2310RBU Data Sheet

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Part Number:
KSC2310RBU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 150 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.05 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Frequency : 100 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum Operating Frequency : 100 MHz
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Collector- Emitter Voltage VCEO Max : 150 V
Maximum DC Collector Current : 0.05 A


Parameters:

Technical/Catalog InformationKSC2310RBU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)150V
Current - Collector (Ic) (Max)50mA
Power - Max800mW
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic500mV @ 1mA, 10mA
Frequency - Transition100MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92L
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSC2310RBU
KSC2310RBU



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