Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
KSC2258STU: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 250 V |
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 0.1 A |
DC Collector/Base Gain hfe Min : | 40 | Configuration : | Single |
Maximum Operating Frequency : | 100 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-126 |
Packaging : | Tube |
Technical/Catalog Information | KSC2258STU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 250V |
Current - Collector (Ic) (Max) | 100mA |
Power - Max | 4W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 40mA, 20V |
Vce Saturation (Max) @ Ib, Ic | 1.2V @ 5mA, 500mA |
Frequency - Transition | 100MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-126 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KSC2258STU KSC2258STU |