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KSC2073H1TU

Transistors Bipolar (BJT) NPN Epitaxial Sil

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SeekIC No. : 00211556 Detail

KSC2073H1TU: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSC2073H1TU Data Sheet

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Part Number:
KSC2073H1TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 150 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 1.5 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Frequency : 4 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum DC Collector Current : 1.5 A
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-220
Maximum Operating Frequency : 4 MHz
Collector- Emitter Voltage VCEO Max : 150 V


Parameters:

Technical/Catalog InformationKSC2073H1TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)150V
Current - Collector (Ic) (Max)1.5A
Power - Max25W
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 500mA, 10V
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Frequency - Transition4MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSC2073H1TU
KSC2073H1TU



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