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KSC1815GRBU: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSC1815GRBU Data Sheet

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Part Number:: KSC1815GRBU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/24

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Transistors Bipolar (BJT) NPN Epitaxial Sil

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	50 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	0.15 A
DC Collector/Base Gain hfe Min :	70	Configuration :	Single
Maximum Operating Frequency :	80 MHz	Maximum Operating Temperature :	+ 125 C
Mounting Style :	Through Hole	Package / Case :	TO-92
Packaging :	Bulk

Description

Transistor Polarity : NPN
Configuration : Single
Collector- Emitter Voltage VCEO Max : 50 V
DC Collector/Base Gain hfe Min : 70
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum Operating Frequency : 80 MHz
Packaging : Bulk
Maximum DC Collector Current : 0.15 A
Maximum Operating Temperature : + 125 C

Parameters:

Technical/Catalog Information	KSC1815GRBU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	150mA
Power - Max	400mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Frequency - Transition	80MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSC1815GRBU KSC1815GRBU

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KSC1815GRBU

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