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KSC1507OTU: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSC1507OTU Data Sheet

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Part Number:: KSC1507OTU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/24

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Transistors Bipolar (BJT) NPN Epitaxial Sil

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	300 V
Emitter- Base Voltage VEBO :	7 V	Maximum DC Collector Current :	0.2 A
DC Collector/Base Gain hfe Min :	40	Configuration :	Single
Maximum Operating Frequency :	80 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-220
Packaging :	Tube

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Packaging : Tube
Maximum Operating Frequency : 80 MHz
Emitter- Base Voltage VEBO : 7 V
Maximum DC Collector Current : 0.2 A
Collector- Emitter Voltage VCEO Max : 300 V
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-220

Parameters:

Technical/Catalog Information	KSC1507OTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	300V
Current - Collector (Ic) (Max)	200mA
Power - Max	15W
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA, 10V
Vce Saturation (Max) @ Ib, Ic	2V @ 5mA, 50mA
Frequency - Transition	80MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSC1507OTU KSC1507OTU

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