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SeekIC No. : 00210346 Detail

KSC1009GTA: Transistors Bipolar (BJT) NPN Epitaxial Transistor

KSC1009GTA Data Sheet

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Part Number:: KSC1009GTA
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/10/18

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Transistors Bipolar (BJT) NPN Epitaxial Sil

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	140 V
Emitter- Base Voltage VEBO :	8 V	Maximum DC Collector Current :	0.7 A
DC Collector/Base Gain hfe Min :	200 at 50 mA at 2 V	Configuration :	Single
Maximum Operating Frequency :	50 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-92-3 Kinked Lead
Packaging :	Ammo

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-92-3 Kinked Lead
Packaging : Ammo
Maximum Operating Frequency : 50 MHz
Emitter- Base Voltage VEBO : 8 V
Maximum DC Collector Current : 0.7 A
Collector- Emitter Voltage VCEO Max : 140 V
DC Collector/Base Gain hfe Min : 200 at 50 mA at 2 V

Parameters:

Technical/Catalog Information	KSC1009GTA
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	140V
Current - Collector (Ic) (Max)	700mA
Power - Max	800mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 50mA, 2V
Vce Saturation (Max) @ Ib, Ic	700mV @ 20mA, 200mA
Frequency - Transition	50MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Tape & Box (TB)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSC1009GTA KSC1009GTA

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