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KSC1009GBU

Transistors Bipolar (BJT) NPN Epitaxial Transistor

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SeekIC No. : 00211602 Detail

KSC1009GBU: Transistors Bipolar (BJT) NPN Epitaxial Transistor

KSC1009GBU Data Sheet

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Part Number:
KSC1009GBU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 140 V
Emitter- Base Voltage VEBO : 8 V Maximum DC Collector Current : 0.7 A
DC Collector/Base Gain hfe Min : 200 at 50 mA at 2 V Configuration : Single
Maximum Operating Frequency : 50 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-92
Packaging : Bulk
Maximum Operating Frequency : 50 MHz
Emitter- Base Voltage VEBO : 8 V
Maximum DC Collector Current : 0.7 A
Collector- Emitter Voltage VCEO Max : 140 V
DC Collector/Base Gain hfe Min : 200 at 50 mA at 2 V


Parameters:

Technical/Catalog InformationKSC1009GBU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)140V
Current - Collector (Ic) (Max)700mA
Power - Max800mW
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 50mA, 2V
Vce Saturation (Max) @ Ib, Ic700mV @ 20mA, 200mA
Frequency - Transition50MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSC1009GBU
KSC1009GBU



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