KSB810YTA

Transistors Bipolar (BJT) PNP Epitaxial Transistor

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SeekIC No. : 00211498 Detail

KSB810YTA: Transistors Bipolar (BJT) PNP Epitaxial Transistor

floor Price/Ceiling Price

Part Number:
KSB810YTA
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 25 V
Emitter- Base Voltage VEBO : - 5 V Maximum DC Collector Current : 0.7 A
DC Collector/Base Gain hfe Min : 70 Configuration : Single
Maximum Operating Frequency : 160 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Ammo    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
DC Collector/Base Gain hfe Min : 70
Mounting Style : Through Hole
Package / Case : TO-92
Packaging : Ammo
Collector- Emitter Voltage VCEO Max : 25 V
Maximum DC Collector Current : 0.7 A
Maximum Operating Frequency : 160 MHz


Parameters:

Technical/Catalog InformationKSB810YTA
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)25V
Current - Collector (Ic) (Max)700mA
Power - Max350mW
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic400mV @ 70mA, 700mA
Frequency - Transition160MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92S
PackagingTape & Box (TB)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSB810YTA
KSB810YTA



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