Transistors Darlington PNP Si Transistor Epitaxial Darlington
KSB795OSTU: Transistors Darlington PNP Si Transistor Epitaxial Darlington
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Configuration : | Single | Transistor Polarity : | PNP |
Collector- Emitter Voltage VCEO Max : | 80 V | Emitter- Base Voltage VEBO : | 8 V |
Collector- Base Voltage VCBO : | 80 V | Maximum DC Collector Current : | 1.5 A |
Maximum Collector Cut-off Current : | 10 uA | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-126 |
Packaging : | Tube |
Technical/Catalog Information | KSB795OSTU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | PNP - Darlington |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Current - Collector (Ic) (Max) | 1.5A |
Power - Max | 1W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 4000 @ 1A, 2V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 10A |
Mounting Type | Through Hole |
Package / Case | TO-126 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KSB795OSTU KSB795OSTU |