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KSB772YSTSSTU

Transistors Bipolar (BJT) PNP Epitaxial Sil

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SeekIC No. : 00210611 Detail

KSB772YSTSSTU: Transistors Bipolar (BJT) PNP Epitaxial Sil

KSB772YSTSSTU Data Sheet

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Part Number:
KSB772YSTSSTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/18

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 30 V
Emitter- Base Voltage VEBO : - 5 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 60 Configuration : Single
Maximum Operating Frequency : 80 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-126
Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Packaging : Tube
Maximum DC Collector Current : 3 A
Maximum Operating Frequency : 80 MHz
DC Collector/Base Gain hfe Min : 60
Collector- Emitter Voltage VCEO Max : 30 V
Package / Case : TO-126


Parameters:

Technical/Catalog InformationKSB772YSTSSTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)30V
Current - Collector (Ic) (Max)3A
Power - Max10W
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 1A, 2V
Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
Frequency - Transition80MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-126
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSB772YSTSSTU
KSB772YSTSSTU



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