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KSB744OSTU: Transistors Bipolar (BJT) PNP Epitaxial Sil

KSB744OSTU Data Sheet

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Part Number:: KSB744OSTU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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1~5000

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Upload time: 2024/9/25

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Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage -...
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Transistors Bipolar (BJT) PNP Epitaxial Sil
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Transistors Bipolar (BJT) PNP Epitaxial Sil

Product Details

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Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	45 V
Emitter- Base Voltage VEBO :	- 5 V	Maximum DC Collector Current :	3 A
DC Collector/Base Gain hfe Min :	60	Configuration :	Single
Maximum Operating Frequency :	45 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-126
Packaging :	Tube

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Packaging : Tube
Maximum DC Collector Current : 3 A
Collector- Emitter Voltage VCEO Max : 45 V
DC Collector/Base Gain hfe Min : 60
Package / Case : TO-126
Maximum Operating Frequency : 45 MHz

Parameters:

Technical/Catalog Information	KSB744OSTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	45V
Current - Collector (Ic) (Max)	3A
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic	2V @ 150mA, 1.5A
Frequency - Transition	45MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-126
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSB744OSTU KSB744OSTU

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KSB744OSTU

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