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KSB708RTU

Transistors Bipolar (BJT) PNP Epitaxial Sil

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SeekIC No. : 00212550 Detail

KSB708RTU: Transistors Bipolar (BJT) PNP Epitaxial Sil

KSB708RTU Data Sheet

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Part Number:
KSB708RTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : - 7 V Maximum DC Collector Current : 7 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Maximum Operating Frequency :
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 80 V
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-220
Emitter- Base Voltage VEBO : - 7 V
Maximum DC Collector Current : 7 A


Parameters:

Technical/Catalog InformationKSB708RTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)7A
Power - Max40W
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 3A, 1V
Vce Saturation (Max) @ Ib, Ic500mV @ 500mA, 5A
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSB708RTU
KSB708RTU



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