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KSB708OTU: Transistors Bipolar (BJT) PNP Epitaxial Sil

KSB708OTU Data Sheet

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Part Number:: KSB708OTU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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1~5000

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Upload time: 2024/12/21

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KSB707 evaluate
Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage -...
KSB707OTU evaluate
Transistors Bipolar (BJT) PNP Epitaxial Sil
KSB707RTU evaluate
Transistors Bipolar (BJT) PNP Epitaxial Sil

Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	80 V
Emitter- Base Voltage VEBO :	- 7 V	Maximum DC Collector Current :	7 A
DC Collector/Base Gain hfe Min :	40	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220	Packaging :	Tube

Description

Maximum Operating Frequency :
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 80 V
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-220
Emitter- Base Voltage VEBO : - 7 V
Maximum DC Collector Current : 7 A

Parameters:

Technical/Catalog Information	KSB708OTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	7A
Power - Max	40W
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 3A, 1V
Vce Saturation (Max) @ Ib, Ic	500mV @ 500mA, 5A
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSB708OTU KSB708OTU

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