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KSB1366G

Transistors Bipolar (BJT) PNP Epitaxial Sil

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SeekIC No. : 00211651 Detail

KSB1366G: Transistors Bipolar (BJT) PNP Epitaxial Sil

KSB1366G Data Sheet

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Part Number:
KSB1366G
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/18

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : - 7 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 100 Configuration : Single
Maximum Operating Frequency : 9 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220
Packaging : Bulk    

Description

DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Maximum DC Collector Current : 3 A
Packaging : Bulk
Package / Case : TO-220
Emitter- Base Voltage VEBO : - 7 V
Maximum Operating Frequency : 9 MHz


Parameters:

Technical/Catalog InformationKSB1366G
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)3A
Power - Max25W
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 2A
Frequency - Transition9MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-220F
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSB1366G
KSB1366G



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