Transistors Bipolar (BJT) PNP Epitaxial Sil
KSB1151YSTU: Transistors Bipolar (BJT) PNP Epitaxial Sil
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 60 V | ||
Emitter- Base Voltage VEBO : | - 7 V | Maximum DC Collector Current : | 5 A | ||
DC Collector/Base Gain hfe Min : | 100 | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-126 | Packaging : | Tube |
Technical/Catalog Information | KSB1151YSTU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Current - Collector (Ic) (Max) | 5A |
Power - Max | 20W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 2A, 1V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 200mA, 2A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-126 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KSB1151YSTU KSB1151YSTU |