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KSB1151YSTSSTU

Transistors Bipolar (BJT) PNP Epitaxial Sil

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SeekIC No. : 00208069 Detail

KSB1151YSTSSTU: Transistors Bipolar (BJT) PNP Epitaxial Sil

KSB1151YSTSSTU Data Sheet

floor Price/Ceiling Price

US $ .19~.37 / Piece | Get Latest Price
Part Number:
KSB1151YSTSSTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.37
  • $.25
  • $.21
  • $.19
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : - 7 V Maximum DC Collector Current : 5 A
DC Collector/Base Gain hfe Min : 100 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-126 Packaging : Tube    

Description

Maximum Operating Frequency :
DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Packaging : Tube
Maximum DC Collector Current : 5 A
Package / Case : TO-126
Emitter- Base Voltage VEBO : - 7 V


Parameters:

Technical/Catalog InformationKSB1151YSTSSTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)5A
Power - Max20W
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 2A, 1V
Vce Saturation (Max) @ Ib, Ic300mV @ 200mA, 2A
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-126
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSB1151YSTSSTU
KSB1151YSTSSTU



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