KSB1151YSTSSTU, US $ .19-.37 , Fairchild Semiconductor, KSB1151YSTSSTU DataSheet download, circuit diagram from SeekIC.com

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KSB1151YSTSSTU: Transistors Bipolar (BJT) PNP Epitaxial Sil

KSB1151YSTSSTU Data Sheet

US $ .19~.37 / Piece | Get Latest Price

Part Number:: KSB1151YSTSSTU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/21

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KSB1015 evaluate
Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage -...
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Transistors Bipolar (BJT) PNP Epitaxial Sil
KSB1015OTU evaluate
US $1.12 - 2.13 / Piece

Transistors Bipolar (BJT) PNP Epitaxial Sil

Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	60 V
Emitter- Base Voltage VEBO :	- 7 V	Maximum DC Collector Current :	5 A
DC Collector/Base Gain hfe Min :	100	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-126	Packaging :	Tube

Description

Maximum Operating Frequency :
DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Packaging : Tube
Maximum DC Collector Current : 5 A
Package / Case : TO-126
Emitter- Base Voltage VEBO : - 7 V

Parameters:

Technical/Catalog Information	KSB1151YSTSSTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	5A
Power - Max	20W
DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 2A, 1V
Vce Saturation (Max) @ Ib, Ic	300mV @ 200mA, 2A
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-126
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSB1151YSTSSTU KSB1151YSTSSTU

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KSB1151YSTSSTU

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