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KSB1116AGTA

Transistors Bipolar (BJT) PNP Epitaxial Sil

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SeekIC No. : 00210269 Detail

KSB1116AGTA: Transistors Bipolar (BJT) PNP Epitaxial Sil

KSB1116AGTA Data Sheet

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Part Number:
KSB1116AGTA
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : - 6 V Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 135 Configuration : Single
Maximum Operating Frequency : 120 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92-3 Kinked Lead
Packaging : Ammo    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 6 V
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Package / Case : TO-92-3 Kinked Lead
Packaging : Ammo
Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 135
Maximum Operating Frequency : 120 MHz


Parameters:

Technical/Catalog InformationKSB1116AGTA
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)1A
Power - Max750mW
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic300mV @ 50mA, 1A
Frequency - Transition120MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingTape & Box (TB)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSB1116AGTA
KSB1116AGTA



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