Transistors Bipolar (BJT) PNP Epitaxial Sil
KSB1116AGBU: Transistors Bipolar (BJT) PNP Epitaxial Sil
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 60 V |
Emitter- Base Voltage VEBO : | - 6 V | Maximum DC Collector Current : | 1 A |
DC Collector/Base Gain hfe Min : | 135 | Configuration : | Single |
Maximum Operating Frequency : | 120 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-92 |
Packaging : | Bulk |
Technical/Catalog Information | KSB1116AGBU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Current - Collector (Ic) (Max) | 1A |
Power - Max | 750mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 1A |
Frequency - Transition | 120MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-92 |
Packaging | Bulk |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KSB1116AGBU KSB1116AGBU |