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KSA708OBU

Transistors Bipolar (BJT) PNP Epitaxial Sil

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KSA708OBU: Transistors Bipolar (BJT) PNP Epitaxial Sil

KSA708OBU Data Sheet

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Part Number:
KSA708OBU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : - 8 V Maximum DC Collector Current : 0.7 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Frequency : 50 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Bulk    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : - 8 V
Collector- Emitter Voltage VCEO Max : 60 V
Package / Case : TO-92
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Maximum Operating Frequency : 50 MHz
Maximum DC Collector Current : 0.7 A


Parameters:

Technical/Catalog InformationKSA708OBU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)700mA
Power - Max800mW
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 50mA, 2V
Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
Frequency - Transition50MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingBulk
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSA708OBU
KSA708OBU



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