Transistors Bipolar (BJT) PNP Epitaxial Transistor
KSA539CYTA: Transistors Bipolar (BJT) PNP Epitaxial Transistor
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 45 V | ||
Emitter- Base Voltage VEBO : | - 5 V | Maximum DC Collector Current : | 0.2 A | ||
DC Collector/Base Gain hfe Min : | 40 | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-92-3 Kinked Lead | Packaging : | Ammo |
Technical/Catalog Information | KSA539CYTA |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Current - Collector (Ic) (Max) | 200mA |
Power - Max | 400mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 50mA, 1V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 15mA, 150mA |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-92 |
Packaging | Tape & Box (TB) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KSA539CYTA KSA539CYTA |