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KSA3010RTU

Transistors Bipolar (BJT) PNP Epitaxial Sil

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SeekIC No. : 00212160 Detail

KSA3010RTU: Transistors Bipolar (BJT) PNP Epitaxial Sil

KSA3010RTU Data Sheet

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Part Number:
KSA3010RTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 120 V
Emitter- Base Voltage VEBO : - 5 V Maximum DC Collector Current : 6 A
DC Collector/Base Gain hfe Min : 55 Configuration : Single
Maximum Operating Frequency : 30 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-3P
Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Packaging : Tube
Maximum DC Collector Current : 6 A
Maximum Operating Frequency : 30 MHz
Collector- Emitter Voltage VCEO Max : 120 V
DC Collector/Base Gain hfe Min : 55
Package / Case : TO-3P


Parameters:

Technical/Catalog InformationKSA3010RTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)120V
Current - Collector (Ic) (Max)6A
Power - Max60W
DC Current Gain (hFE) (Min) @ Ic, Vce55 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic2.5V @ 500mA, 5A
Frequency - Transition30MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-3P
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSA3010RTU
KSA3010RTU



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