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KSA1614YTU

Transistors Bipolar (BJT) PNP Si Transistor Epitaxial

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SeekIC No. : 00211865 Detail

KSA1614YTU: Transistors Bipolar (BJT) PNP Si Transistor Epitaxial

KSA1614YTU Data Sheet

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Part Number:
KSA1614YTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 55 V
Emitter- Base Voltage VEBO : - 5 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Maximum Operating Frequency :
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Packaging : Tube
Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-220
Collector- Emitter Voltage VCEO Max : 55 V


Parameters:

Technical/Catalog InformationKSA1614YTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)55V
Current - Collector (Ic) (Max)3A
Power - Max20W
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-220F
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSA1614YTU
KSA1614YTU



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