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KSA1406CSTU

Transistors Bipolar (BJT) PNP Epitaxial Sil

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KSA1406CSTU: Transistors Bipolar (BJT) PNP Epitaxial Sil

KSA1406CSTU Data Sheet

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Part Number:
KSA1406CSTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 200 V
Emitter- Base Voltage VEBO : - 4 V Maximum DC Collector Current : 0.1 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Frequency : 400 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-126
Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Packaging : Tube
Maximum DC Collector Current : 0.1 A
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-126
Collector- Emitter Voltage VCEO Max : 200 V
Emitter- Base Voltage VEBO : - 4 V
Maximum Operating Frequency : 400 MHz


Parameters:

Technical/Catalog InformationKSA1406CSTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)200V
Current - Collector (Ic) (Max)100mA
Power - Max1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10mA, 10V
Vce Saturation (Max) @ Ib, Ic800mV @ 3mA, 30mA
Frequency - Transition400MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-126
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSA1406CSTU
KSA1406CSTU



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