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KSA1370FBU

Transistors Bipolar (BJT) PNP Si Transistor Epitaxial

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SeekIC No. : 00211727 Detail

KSA1370FBU: Transistors Bipolar (BJT) PNP Si Transistor Epitaxial

KSA1370FBU Data Sheet

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Part Number:
KSA1370FBU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 200 V
Emitter- Base Voltage VEBO : - 5 V Maximum DC Collector Current : 0.1 A
DC Collector/Base Gain hfe Min : 100 Configuration : Single
Maximum Operating Frequency : 150 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Bulk    

Description

DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Package / Case : TO-92
Maximum DC Collector Current : 0.1 A
Packaging : Bulk
Maximum Operating Frequency : 150 MHz
Collector- Emitter Voltage VCEO Max : 200 V


Parameters:

Technical/Catalog InformationKSA1370FBU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)200V
Current - Collector (Ic) (Max)100mA
Power - Max1W
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 10V
Vce Saturation (Max) @ Ib, Ic600mV @ 2mA, 20mA
Frequency - Transition150MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92L
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSA1370FBU
KSA1370FBU



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