Transistors Bipolar (BJT) PNP Si Transistor Epitaxial
KSA1220YSTU: Transistors Bipolar (BJT) PNP Si Transistor Epitaxial
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 120 V |
Emitter- Base Voltage VEBO : | - 5 V | Maximum DC Collector Current : | 1.2 A |
DC Collector/Base Gain hfe Min : | 60 | Configuration : | Single |
Maximum Operating Frequency : | 175 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-126 |
Packaging : | Tube |
Technical/Catalog Information | KSA1220YSTU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 120V |
Current - Collector (Ic) (Max) | 1.2A |
Power - Max | 1.2W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 700mV @ 200mA, 1A |
Frequency - Transition | 175MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-126 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KSA1220YSTU KSA1220YSTU |