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SeekIC No. : 00210799 Detail

KSA1175GTA: Transistors Bipolar (BJT) PNP Epitaxial Transistor

KSA1175GTA Data Sheet

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Part Number:: KSA1175GTA
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/22

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Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage -...
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Transistors Bipolar (BJT) PNP Epitaxial Sil
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Transistors Bipolar (BJT) PNP Epitaxial Sil

Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	50 V
Emitter- Base Voltage VEBO :	- 5 V	Maximum DC Collector Current :	0.15 A
DC Collector/Base Gain hfe Min :	40	Configuration :	Single
Maximum Operating Frequency :	180 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-92
Packaging :	Ammo

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 50 V
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Package / Case : TO-92
Packaging : Ammo
Maximum Operating Frequency : 180 MHz
DC Collector/Base Gain hfe Min : 40
Maximum DC Collector Current : 0.15 A

Parameters:

Technical/Catalog Information	KSA1175GTA
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	150mA
Power - Max	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic	300mV @ 10mA, 100mA
Frequency - Transition	180MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92S
Packaging	Tape & Box (TB)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSA1175GTA KSA1175GTA

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KSA1175GTA

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