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KSA1175GBU

Transistors Bipolar (BJT) PNP Epitaxial Sil

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SeekIC No. : 00212323 Detail

KSA1175GBU: Transistors Bipolar (BJT) PNP Epitaxial Sil

KSA1175GBU Data Sheet

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Part Number:
KSA1175GBU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 50 V
Emitter- Base Voltage VEBO : - 5 V Maximum DC Collector Current : 0.15 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Frequency : 180 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Bulk    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 50 V
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Package / Case : TO-92
Maximum Operating Frequency : 180 MHz
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Maximum DC Collector Current : 0.15 A


Parameters:

Technical/Catalog InformationKSA1175GBU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)150mA
Power - Max250mW
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
Frequency - Transition180MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92S
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSA1175GBU
KSA1175GBU



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