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KSA1174FBU: Transistors Bipolar (BJT) PNP Epitaxial Sil

KSA1174FBU Data Sheet

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Part Number:: KSA1174FBU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/25

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Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage -...
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Transistors Bipolar (BJT) PNP Epitaxial Sil
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Transistors Bipolar (BJT) PNP Epitaxial Sil

Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	120 V
Emitter- Base Voltage VEBO :	- 5 V	Maximum DC Collector Current :	0.05 A
DC Collector/Base Gain hfe Min :	200	Configuration :	Single
Maximum Operating Frequency :	100 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-92
Packaging :	Bulk

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Package / Case : TO-92
Maximum Operating Frequency : 100 MHz
Packaging : Bulk
Collector- Emitter Voltage VCEO Max : 120 V
DC Collector/Base Gain hfe Min : 200
Maximum DC Collector Current : 0.05 A

Parameters:

Technical/Catalog Information	KSA1174FBU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	120V
Current - Collector (Ic) (Max)	50mA
Power - Max	300mW
DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic	300mV @ 1mA, 10mA
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	1A
Mounting Type	Through Hole
Package / Case	TO-92S
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSA1174FBU KSA1174FBU

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KSA1174FBU

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