DescriptionThe KS84C31 is designed as one kind of high performance dynamic RAM (DRAM) controller. This device simplies the interface between the microprocessor and the DRAM array, while also significantly reducing the required design time. And this device also supports 256K, 1MBit and 4 MBit DRAMs...
KS84C31: DescriptionThe KS84C31 is designed as one kind of high performance dynamic RAM (DRAM) controller. This device simplies the interface between the microprocessor and the DRAM array, while also signifi...
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The KS84C31 is designed as one kind of high performance dynamic RAM (DRAM) controller. This device simplies the interface between the microprocessor and the DRAM array, while also significantly reducing the required design time. And this device also supports 256K, 1MBit and 4 MBit DRAMs. It has a drive capability of 380 pf, sufficient to drive large memory arrays, Several hundred DRAMs may be driven if damping resistors are used to control ground bounce.
Features of the KS84C31 are:(1)40 MHz operation;(2)easy interface to Motorola and Intel CPUs;(3)1486 burst mode operation;(4)page, static column and nlbble mode accesses;(5)interleaved and non-interleaved accesses;(6)synchronous and asynchronous operation;(7)direct drive for 256K, 1MBit, 4MBit and 16MBit DRAMs;(8)high capacitive load, slew rate controlled drivers;(9)page switch detection logic;(10)built in precision delay line.
The absolute maximum ratings of the KS84C31 can be summarized as:(1)DC supply voltage: 7 V;(2)temperature under bias: 0 to +70 ;(3)storage temperature: -65 to +150 ;(4)all input and output voltage: Vss-0.5 V to +7 V;(5)power dissipation at 40 MHz: 0.75 W;(6)E.S.D.: 2000 V. If you want to know more information such as the electrical characteristics about the KS84C31, please download the datasheet in www.seekic.com or www.chinaicmart.com.