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KRLML6402

Features: Ultra low on-resistance. P-Channel MOSFET. SOT-23 Footprint. Low profile(<1.1mm). Available in tape and reel. Fast switching.Specifications Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 V Gate-to-source voltage VGS ±12 V Continuous dr...

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SeekIC No. : 004387394 Detail

KRLML6402: Features: Ultra low on-resistance. P-Channel MOSFET. SOT-23 Footprint. Low profile(<1.1mm). Available in tape and reel. Fast switching.Specifications Parameter Symbol Rating Unit D...

KRLML6402 Data Sheet

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Part Number:
KRLML6402
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Ultra low on-resistance.
P-Channel MOSFET.
SOT-23 Footprint.
Low profile(<1.1mm).
Available in tape and reel.
Fast switching.


Specifications

Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
-20
V
Gate-to-source voltage
VGS
±12
V
Continuous drain curent,VGS@-4.5V , TA=25
ID
-3.7
A
Continuous drain curent,VGS@-4.5V , TA=70
-2.2
Pulsed drain current *1
IDM
-22
A
Power dissipation                             @TA=25
PD
1.3
W
Power dissipation                              @TA=70
0.8
Linear derating factor
0.01
mW/
Single Pulse Avalanche Energy *2
EAS
11
MJ
Maximum Junction-to-Ambient *3
RJA
100
/W
Junction and storage temperature range
TJ,TSTG
-55 to +150
*1Reptitive rating:pulse width limited by max.junction temperature.
*2. StartingTJ=25,L=1.65mH ,RG=25,IAS=-3.7A.
*3.Surface mounted on 1''square single layer 1oz.copper FR4 board,steady state.


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