Features: `High emitter-base voltage : VEBO=25V(Min)`High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)`Low on resistance : Ron=1 (Typ.) (IB=5mA)`With Built-in Bias Resistors.`Simplify Circuit Design.`Reduce a Quantity of Parts and Manufacturing Process.Specifications CHARACTERISTI...
KRC281M: Features: `High emitter-base voltage : VEBO=25V(Min)`High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)`Low on resistance : Ron=1 (Typ.) (IB=5mA)`With Built-in Bias Resistors.`Simplify Circ...
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CHARACTERISTIC |
SYMBOL |
RATING |
UNIT |
Collector-Base Voltage |
VCBO |
50 |
V |
Collector-Emitter Voltage |
VCEO |
20 |
V |
Emitter-Base Voltage |
VEBO |
25 |
V |
Collector Current |
IC |
300 |
mA |
Collector Power Dissipation |
PC |
400 |
mW |
Junction Temperature |
Tj |
150 |
|
Storage Temperature Range |
Tstg |
-55~150 |