KRA556E-RTK/P

The KRA556E-RTK/P is designed as one kind of semiconductor that can be used in switching application and interface circuit and driver circuit application. Features of the KRA556E-RTK/P are:(1)with built-in bias resistors;(2)simplify circuit design;(3)reduce a quantity of parts and manufacturing process;(4)high packing density.

The absolute maximum ratings of the KRA556E-RTK/P can be summarized as:(1)output voltage: -50 V;(2)Power Dissipation: 200 mW;(3)Junction Temperature: 150 ;(4)Storage Temperature Range: -55 to +150 ;(5)input voltage: -30, 6 V;(6)Output Current: -100 mA.

And the electrical characteristics of the KRA556E-RTK/P can be summarized as:(1)output cut-off current: -500 nA;(2)DC current gain: 80 to 200;(3)Output Voltage: -0.1 to -0.3 V;(4)Input Voltage (ON): -0.9 to -1.3 V;(5)transition frequency: 200 MHz. If you want to know more information such as the electrical characteristics about the KRA556E-RTK/P, please download the datasheet in www.seekic.com or www.chinaicmart.com .