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KQD3P50

Features: `-1.2A, -500V, RDS(on) = 4.9 @VGS = -10 V`Low gate charge ( typical 18 nC)`Low Crss ( typical9.5 pF)`Fast switching`100% avalanche tested`Improved dv/dt capabilitySpecifications Parameter Symbol Rating Unit Drain to Source Voltage VDSS -500 V Drain Curr...

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SeekIC No. : 004386828 Detail

KQD3P50: Features: `-1.2A, -500V, RDS(on) = 4.9 @VGS = -10 V`Low gate charge ( typical 18 nC)`Low Crss ( typical9.5 pF)`Fast switching`100% avalanche tested`Improved dv/dt capabilitySpecifications Par...

KQD3P50 Data Sheet

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Part Number:
KQD3P50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

`-1.2A, -500V, RDS(on) = 4.9 @VGS = -10 V
`Low gate charge ( typical 18 nC)
`Low Crss ( typical9.5 pF)
`Fast switching
`100% avalanche tested
`Improved dv/dt capability


Specifications

Parameter
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
-500
V
Drain Current Continuous (TC=25)
ID
-2.1
A
Drain Current Continuous (TC=100)
-1.33
A
Drain Current Pulsed *1
IDM
-8.4
A
Gate-Source Voltage
VGSS
±30
V
Single Pulsed Avalanche Energy*2
EAS
250
mJ
Avalanche Current *1
IAR
-2.1
A
Repetitive Avalanche Energy *1
EAR
5
mJ
Peak Diode Recovery dv/dt *3
dv/dt
-4.5
V/ns
Power dissipation @ TA=25
PD
2.5
W
Power dissipation @ TC=25
Derate above 25
PD
50
W
0.4
W/
Operating and Storage Temperature
TJ, TSTG
-55 to150
Maximum lead temperature for soldering
purposes,1/8" from case for 5 seconds
TL
300
Thermal Resistance Junction to Case
RJC
2.5
/W
Thermal Resistance Junction to Ambient *4
RJA
50
/W
Thermal Resistance Junction to Ambient
RJA
110
/W
*1 Repetitive Rating:Pulse width limited by maximum junction temperature
*2 l=102mH,IAS=-2.1A,VDD=50V,RG=25 ,Startion TJ=25
*3 ISD-2.7A,di/dt200A/ S,VDDBVDSS,Startiong TJ=25
*4 When mounted on the minimum pad size recommended (PCB Mount)


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