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KQB2N80

Features: `2.4A, 800 V. R DS(ON) = 6.3 @ VGS = 10 V`Low gate charge (typical 12nC)`Low Crss(typical 5.5pF)`Fast switching`100% avalanche tested`lmproved dv/dt capabilitySpecifications Parameter Symbol Rating Unit Drain to Source Voltage VDSS 800 V Drain Current C...

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SeekIC No. : 004386817 Detail

KQB2N80: Features: `2.4A, 800 V. R DS(ON) = 6.3 @ VGS = 10 V`Low gate charge (typical 12nC)`Low Crss(typical 5.5pF)`Fast switching`100% avalanche tested`lmproved dv/dt capabilitySpecifications Paramet...

KQB2N80 Data Sheet

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Part Number:
KQB2N80
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`2.4A, 800 V. R DS(ON) = 6.3 @ VGS = 10 V
`Low gate charge (typical 12nC)
`Low Crss(typical 5.5pF)
`Fast switching
`100% avalanche tested
`lmproved dv/dt capability


Specifications

Parameter
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
800
V
Drain Current Continuous (TC=25 )
ID
2.4
A
Drain Current Continuous (TC=100 )
1.52
A
Drain Current Pulsed *1
IDM
9.6
A
Gate-Source Voltage
VGSS
±30
V
Single Pulsed Avalanche Energy*2
EAS
180
mJ
Avalanche Current *1
IAR
2.4
A
Repetitive Avalanche Energy *1
EAR
8.5
mJ
Peak Diode Recovery dv/dt *3
dv/dt
4
V/ns
Power dissipation @ TA=25
PD
3.13
W
Power dissipation @ TC=25
Derate above 25
PD
85
W
0.68
W/
Operating and Storage Temperature
TJ, TSTG
-55 to150
Maximum lead temperature for soldering
purposes,1/8" from case for 5 seconds
TL
300
Thermal Resistance Junction to Case
RJA
1.47
/W
Thermal Resistance Junction to Ambient *4
RJC
40
/W
Thermal Resistance Junction to Ambient
RJC
62.5
/W
*1 Repetitive Rating:Pulse width limited by maximum junction temperature
*2 l=59mH,IAS=1.8A,VDD=50V,RG=25 ,Startion TJ=25
*3 ISD 2.4A,di/dt 200A/ ,VDD BVDSS,Startiong TJ=25
*4 When mounted on the minimum pad size recommended (PCB Mount)


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