KPCF8402

KPCF8402 is a type of silicon P, N channel MOS type transistor which has four unique features: The first one is Low drain-source ON resistance: P Channel R_{DS (ON)} is 60 m (typ.); N Channel R_{DS (ON)} is 38 m (typ.). The second one is high forward transfer admittance: P Channel |Yfs| is 5.9 S (typ.); N Channel |Yfs| is 6.8 S (typ.). The third one is Low leakage current: P Channel I_DSS is -10 A (V_DS is -30 V); N Channel I_DSS is 10 A (V_DS is 30 V). The forth one is enhancement-mode: P Channel Vth is -0.8 to -2.0 V (V_DS is -10 V, I_D is -1mA);N Channel V_th is 1.3 to 2.5 V (V_DS is 10 V, I_D is 1mA).
There are some absolute maximum ratings about it when Ta is 25 . Drain to source voltage(V_DSS) is -30 V ( p-channel) and 30 V (n-channel). Drain to gate voltage(RGS is 20 k (V_DGR) is -30 V( p-channel) and 30 V(n-channel). Gate to source (V_GSS) is ±20 V( p-channel) and ±20 V (n-channel).Avalanche current(I_AR) is -1.6A and 2 A.Channel temperature (Tch) is 150. Storage temperature range (Tstg) is -55 to 150. otherwise, there are also some electrical characteristics. Gate leakage current (I_GSS) is ±10A max(p-ch) and 10A max ( n-ch) when VGS is ±16V and V_DS is 0 V.Datin cutoff current (I_DSS) is -10A max (p-ch) and 10A max (n-ch) when VDS is 30 V abd VGS is 0.Drain-source breakdown voltage(V _{(BR) DSS}) is -30 V min when ID is -10 mA ans V_GS is 0 (p-ch) while V _(BR) DSX is -15 V min when I_D is 10 mA and VGS is 20 V.Drain-source breakdown voltage(V _{(BR) DSS}) is 30 V min when ID is -10 mA ans V_GS is 20V (n-ch) while V _(BR) DSX is 15 V min when I_D is 10 mA and VGS is -20 V.Gate threshold voltage(Vth) is -0.8 V min and -2.0 V max when V_DS is -10 V and ID is -1 mA(p-ch) while it is 1.3 V min and 2.5 V max when VDS is 10 V and I_D is 1mA (n-channel).
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