KPA2790GR

Features: `Low on-state resistance`N-channel RDS(on)1 = 28 m MAX. (VGS = 10 V, ID = 3 A)`RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 3 A)`P-channel RDS(on)1 = 60 m MAX. (VGS = -10 V, ID = -3 A)`RDS(on)2 = 80 m MAX. (VGS = -4.5 V, ID = -3 A)`Low input capacitance`N-channel Ciss = 500 pF TYP.`P-channel ...

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SeekIC No. : 004386587 Detail

KPA2790GR: Features: `Low on-state resistance`N-channel RDS(on)1 = 28 m MAX. (VGS = 10 V, ID = 3 A)`RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 3 A)`P-channel RDS(on)1 = 60 m MAX. (VGS = -10 V, ID = -3 A)`RDS(on)2...

floor Price/Ceiling Price

Part Number:
KPA2790GR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

`Low on-state resistance
`N-channel RDS(on)1 = 28 m MAX. (VGS = 10 V, ID = 3 A)
`RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 3 A)
`P-channel RDS(on)1 = 60 m MAX. (VGS = -10 V, ID = -3 A)
`RDS(on)2 = 80 m MAX. (VGS = -4.5 V, ID = -3 A)
`Low input capacitance
`N-channel Ciss = 500 pF TYP.
`P-channel Ciss = 460 pF TYP.
`Built-in gate protection diode
`Small and surface mount package





Specifications

Parameter Symbol N-Channel P- Channel UNIT
Drain to Source Voltage (VGS= 0 V) VDSS 30 -30 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 ±20 V
Drain Current (DC) ID(DC) ±6 ±6 A
Drain Current (pulse) *1 ID (pulse)*1 ±24 ±24 A
Total Power Dissipation (1 unit) *2 PT 1.7 W
Total Power Dissipation (2 units) *2 PT 2 W
Channel Temperature Tch 150
Storage Temperature Tstg 55 to +150
Single Avalanche Current *3 IAS 6 -6 A
Single Avalanche Energy *3 EAS 3.6 3.6 mJ
*1 PW 10 s, Duty Cycle 1%
*2 Mounted on ceramic substrate of 2000 mm2 x 1.6 mm
*3 Starting Tch = 25 , VDD =1/2 X VDSS, RG= 25 , L = 100 H, VGS = VGSS 0 V





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