KP-3216

Features: ·l3.2mmx1.6mm SMT LED. 1.1mm THICKNESS.·lLOW POWER CONSUMPTION.·lWIDE VIEWING ANGLE.·lIDEAL FOR BACKLIGHT AND INDICATOR.·lVARIOUS COLORS AND LENS TYPES AVAILABLESpecifications Parameter BrightRed HighEfficiencyRed Yellow SuperBrightRed SuperBrightGreen SuperBrightY...

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KP-3216 Picture
SeekIC No. : 004386549 Detail

KP-3216: Features: ·l3.2mmx1.6mm SMT LED. 1.1mm THICKNESS.·lLOW POWER CONSUMPTION.·lWIDE VIEWING ANGLE.·lIDEAL FOR BACKLIGHT AND INDICATOR.·lVARIOUS COLORS AND LENS TYPES AVAILABLESpecifications Paramet...

floor Price/Ceiling Price

Part Number:
KP-3216
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

·l3.2mmx1.6mm SMT LED. 1.1mm THICKNESS.
·lLOW POWER CONSUMPTION.
·lWIDE VIEWING ANGLE.
·lIDEAL FOR BACKLIGHT AND INDICATOR.
·lVARIOUS COLORS AND LENS TYPES AVAILABLE



Specifications

Parameter
Bright
Red
High
Efficiency
Red
Yellow
Super
Bright
Red
Super
Bright
Green
Super
Bright
Yellow
Units
Power dissipation
105
105
105
100
105
125
mW
DC Forward Current
25
30
30
30
25
30
mA
Peak Forward Current [1]
150
150
150
150
150
150
mA
Reverse Voltage
5
5
5
5
5
5
V
Operating/Storage Temperature
-40 To +85

Note:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.



Description

The Bright Red source color devices KP-3216 are made with Gallium Phosphide Red Light Emitting Diode.

The Super Bright Green source color devices KP-3216 are made with Gallium Phosphide Green Light Emitting Diode.

The High Efficiency Red source color devices KP-3216 are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.

The Yellow source color devices KP-3216 are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.

The Super Bright Red source color devices KP-3216 are made with Gallium Aluminum Arsenide Red Light Emitting Diodes.

The Super Bright Yellow source color devices KP-3216 are made with DH InGaAlP on GaAs substrate Light Emitting Diode.




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