Features: • Part Identification - KMM5364003CKG(4096 cycles/64ms Ref, SOJ, Gold)• Fast Page Mode Operation• CAS-before-RAS refresh capability• RAS-only and Hidden refresh capability• TTL compatible inputs and outputs• Single +5V ±10% power supply• JEDEC st...
KMM5364003CKG: Features: • Part Identification - KMM5364003CKG(4096 cycles/64ms Ref, SOJ, Gold)• Fast Page Mode Operation• CAS-before-RAS refresh capability• RAS-only and Hidden refresh cap...
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Features: • Part Identification - KMM5321200C2W(1024 cycles/16ms Ref, SOJ, Solder)• Fa...
Features: • Part Identification- KMM5321200C2WG(1024 cycles/16ms Ref, SOJ, Gold)• Fast...
Features: • Part Identification - KMM5321204C2W(1024 cycles/16ms Ref, SOJ, Solder)• Fa...
Item |
Symbol |
Rating |
Unit |
Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current |
VIN, VOUT VCC Tstg PD IOS |
-1 to +7.0 -1 to +7.0 -55 to +150 9 50 |
V V W mA |
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for in tended periods may affect device reliability.
The Samsung KMM5364003CKG is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364003CKG consists of eight CMOS 4Mx4bits DRAMs in 24-pin SOJ package and one CMOS 4Mx4 bit Quad CAS DRAM in 28-pin SOJ package mounted on a 72-pin glassepoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. TheKMM5364003CKG is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.