Features: • Part Identification- KMM53632004BKG(4K cycles/64ms Ref, SOJ, Gold)• Extended Out Data Mode Operation• CAS-before-RAS & Hidden Refresh capability• RAS-only refresh capability• TTL compatible inputs and outputs• Single +5V±10% power supply• J...
KMM53632004BKG: Features: • Part Identification- KMM53632004BKG(4K cycles/64ms Ref, SOJ, Gold)• Extended Out Data Mode Operation• CAS-before-RAS & Hidden Refresh capability• RAS-only ref...
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Features: • Part Identification - KMM5321200C2W(1024 cycles/16ms Ref, SOJ, Solder)• Fa...
Features: • Part Identification- KMM5321200C2WG(1024 cycles/16ms Ref, SOJ, Gold)• Fast...
Features: • Part Identification - KMM5321204C2W(1024 cycles/16ms Ref, SOJ, Solder)• Fa...
Item |
Symbol |
Rating |
Unit |
Voltage on any pin relative to VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current |
VIN, VOUT VCC Tstg Pd IOS |
-1 to +7.0 -1 to +7.0 -55 to +125 24 50 |
V V W mA |
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended periods may affect device reliability.
The Samsung KMM53632004BKG is a 32Mx36bits Dynamic RAM high density memory module. The Samsung KMM53632004BKG consists of sixteen CMOS 16Mx4bits and eight CMOS 16Mx1bit DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM53632004BKG is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.