Features: • Part Identification - KMM53616004BKG(4K cycles/64ms Ref, SOJ, Gold)• Hyper Page Mode Operation• CAS-before-RAS & Hidden Refresh capability• RAS-only refresh capability• TTL compatible inputs and outputs• Single +5V±10% power supply• JEDEC s...
KMM53616004BKG: Features: • Part Identification - KMM53616004BKG(4K cycles/64ms Ref, SOJ, Gold)• Hyper Page Mode Operation• CAS-before-RAS & Hidden Refresh capability• RAS-only refresh c...
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Features: • Part Identification - KMM5321200C2W(1024 cycles/16ms Ref, SOJ, Solder)• Fa...
Features: • Part Identification- KMM5321200C2WG(1024 cycles/16ms Ref, SOJ, Gold)• Fast...
Features: • Part Identification - KMM5321204C2W(1024 cycles/16ms Ref, SOJ, Solder)• Fa...
Item |
Symbol |
Rating |
Unit |
Voltage on any pin relative to V SS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current |
VIN, VOUT VCC Tstg Pd IOS |
-1 to +7.0 -1 to +7.0 -55 to +125 12 50 |
V V W mA |
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended periods may affect device reliability.
The Samsung KMM53616004BKG is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616004B consists of eight CMOS 16Mx4bits DRAMs and four CMOS 16Mx1bit DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM The KMM53616004BKG is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.