KMM5361205C2W

* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for in tended periods may affect device reliability.

The Samsung KMM5361205C2W is a 1Mx36bits Dynamic RAM high density memory module. The Samsung KMM5361205C2W consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ package and one CMOS 1Mx4 bit Quad CAS with EDO DRAM in 24-pin SOJ package mounted on a 72-pin glassepoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5361205C2W is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.