Features: • Part Identification - KMM5328004BSW(4K cycles/64ms Ref, TSOP, Solder)• Extended Data Out Mode Operation• CAS-before-RAS & Hidden Refresh capability• RAS-only refresh capability• TTL compatible inputs and outputs• Single +5V±10% power supply•...
KMM5328004BSW: Features: • Part Identification - KMM5328004BSW(4K cycles/64ms Ref, TSOP, Solder)• Extended Data Out Mode Operation• CAS-before-RAS & Hidden Refresh capability• RAS-only ...
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Features: • Part Identification- KMM5321200C2WG(1024 cycles/16ms Ref, SOJ, Gold)• Fast...
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Item |
Symbol |
Rating |
Unit |
Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current |
VIN, VOUT VCC Tstg PD IOS |
-1 to +7.0 -1 to +7.0 -55 to +125 4 50 |
V V W mA |
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended periods may affect device reliability.
The Samsung KMM5328004BSW is a 8Mx32bits Dynamic RAMhigh density memory module. The Samsung KMM5328004BSW consists of four CMOS 4Mx16bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5328004BSW is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.