Features: • Part Identification - KMM53232004BKG(4K cycles/64ms Ref, SOJ, Gold)• Extended Data Out Mode Operation• CAS-before- RAS & Hidden Refresh capability• RAS-only refresh capability• TTL compatible inputs and outputs• Single +5V±10% power supply•...
KMM53232004BKG: Features: • Part Identification - KMM53232004BKG(4K cycles/64ms Ref, SOJ, Gold)• Extended Data Out Mode Operation• CAS-before- RAS & Hidden Refresh capability• RAS-only r...
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Features: • Part Identification - KMM5321200C2W(1024 cycles/16ms Ref, SOJ, Solder)• Fa...
Features: • Part Identification- KMM5321200C2WG(1024 cycles/16ms Ref, SOJ, Gold)• Fast...
Features: • Part Identification - KMM5321204C2W(1024 cycles/16ms Ref, SOJ, Solder)• Fa...
• Part Identification
- KMM53232004BKG(4K cycles/64ms Ref, SOJ, Gold)
• Extended Data Out Mode Operation
• CAS-before- RAS & Hidden Refresh capability
• RAS-only refresh capability
• TTL compatible inputs and outputs
• Single +5V±10% power supply
• JEDEC standard PDpin & pinout
• PCB : Height(1420mil), double sided component
Item |
Symbol |
Rating |
Unit |
Voltage on any pin relative to VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current |
VIN, VOUT |
-1 to +7.0 -1 to +7.0 -55 to +125 16 50 |
V V W mA |
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended periods may affect device reliability.
The Samsung KMM53232004BKG is a 32Mx32bits Dynamic RAM high density memory module. The Samsung KMM53232004BKG consists of sixteen CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM53232004BKG is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.