Features: • Part Identification - KMM53216004CK(4K cycles/64ms Ref, SOJ, Solder) - KMM53216004CKG(4K cycles/64ms Ref, SOJ, Gold)• Extended Data Out Mode Operation• CAS-before-RAS & Hidden Refresh capability• RAS-only refresh capability• TTL compatible inputs and o...
KMM53216004CKG: Features: • Part Identification - KMM53216004CK(4K cycles/64ms Ref, SOJ, Solder) - KMM53216004CKG(4K cycles/64ms Ref, SOJ, Gold)• Extended Data Out Mode Operation• CAS-before-RAS &...
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Features: • Part Identification - KMM5321200C2W(1024 cycles/16ms Ref, SOJ, Solder)• Fa...
Features: • Part Identification- KMM5321200C2WG(1024 cycles/16ms Ref, SOJ, Gold)• Fast...
Features: • Part Identification - KMM5321204C2W(1024 cycles/16ms Ref, SOJ, Solder)• Fa...
Item |
Symbol |
Rating |
Unit |
Voltage on any pin relative to VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current |
VIN, VOUT VCC Tstg Pd IOS |
-1 to +7.0 -1 to +7.0 -55 to +125 8 50 |
V V W mA |
The Samsung KMM53216004C is a 16Mx32bits Dynamic RAM high density memory module. The Samsung KMM53216004C consists of eight CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM53216004C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.